The Role of Defects in Modulating the Electronic Properties of Topological Insulators and Their Potential in Quantum Technologies
DOI:
https://doi.org/10.22401/ANJS.29.2.07Keywords:
Topological Insulators, Defects Engineering, Defects Computing, Quantum TechnologiesAbstract
Topological insulators are electronic systems with a large energy gap and spin-polarized surface or edge states inhabiting the band gap. As a result, they have been addressed in spintronics, fault-tolerant quantum computing, quantum information technology, and spin-based quantum networks. Furthermore, they can be manipulated into three-dimensional topological Josephson junctions, which have been proposed for nuclear vibrational spectroscopy and metrology. Importantly, the interesting properties of topological insulators depend strongly on the large-scale band structures as well as the properties of the edge or surface states. As a result, modulating the electronic properties of these gapless states becomes crucial for these applications. Defects serve as a fundamental means of changing the electronic properties of topologically protected edge or surface states. Therefore, characterizing such “intrinsic” defects is crucial for improving the use of these materials for quantum technologies. In this paper, the question of how to identify and eliminate such defects using topological elements in Josephson junctions is addressed. The analysis and investigation demonstrate that there is an urgent need for a systematic study of the relationship between defects and electronic properties. There were important results due to the use of quantum technologies that deal with free carriers on the surface of topological insulators, which seeks to compensate for the surface charges that accumulate at extrinsic (intrinsic) defects, making it difficult to characterize these defects with appropriate techniques. The collected results show that smooth surfaces and increased bulk states are desirable conditions for defect observation and can be obtained if the space charge regions within the valence and conduction band gap are increased.
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