MEASUREMENT OF DIFFUSION LENGTH IN P-N JUNCTIONSILICON SOLAR CELL

  • Rana O Mahdi School of Applied Sciences, University of Technology, Iraq.
  • Jehan E Simon School of Applied Sciences, University of Technology, Iraq.
  • Oday N Slman School of Applied Sciences, University of Technology, Iraq.
Keywords: NON

Abstract

In this work, p-n junction silicon solar cells were fabricated using Plasma-assisted deposition technique, The minority-carriers diffusion length in the base region of a silicon solar cell has been determined by measuring the short-circuit current as a function of the wavelength of incident light. The incident light intensity required to produce a given short-circuit current is a linear function of the reciprocal absorption coefficient for each wavelength. and the extrapolation of this relation to zero intensity yields the diffusion length. The accuracy of this method appears to be greatly accepted.

Published
2008-04-01
How to Cite
Mahdi, R. O., Simon, J. E., & Slman, O. N. (2008). MEASUREMENT OF DIFFUSION LENGTH IN P-N JUNCTIONSILICON SOLAR CELL. Al-Nahrain Journal of Science, 11(1), 59-63. Retrieved from https://anjs.edu.iq/index.php/anjs/article/view/1392
Section
Articles