THE INFLUENCE OF HEATING TREATMENT ON PHYSICALPROPERTIES OF POROUS SILICON

Authors

  • Alwan M Alwan School of Applied Sciences, University of Technology, Baghdad-Iraq
  • Narges Z Abd alzahra School of Applied Sciences, University of Technology, Baghdad-Iraq

Keywords:

Porous Silicon, photo electrochemical, rapid thermal oxidation

Abstract

In this work we studying the effect of thermal treatment on the electrical and conduction properties of metal /porous silica /n-si /metal prepared by photo electro chemical etching for etching time (15 min. Oxidation occur in oxidation time (15-150)sec at 750Ċ.After investigated current–voltage (J-V)measurement we found increase in rectification ratio ,barrier height increase with oxidation time, the rectification ration was 5 before oxidation will be 21 after 30 s oxidation time, barrier height value was (0.756eV) will be( 0.85eV) at oxidation time 30 s ,the ideality factor after oxidation was 15 will be 2.75 at 30 sec of oxidation time mean that the device approach from the ideality characteristics.

 

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Published

2018-08-08

Issue

Vol. 12 No. 2 (2009): June

Section

Articles

How to Cite

[1]
“THE INFLUENCE OF HEATING TREATMENT ON PHYSICALPROPERTIES OF POROUS SILICON”, ANJS, vol. 12, no. 2, pp. 76–81, Aug. 2018, Accessed: Apr. 28, 2024. [Online]. Available: https://anjs.edu.iq/index.php/anjs/article/view/1240