Fabrication of Laser Detectors using Ge wafer Doped with Sb

Authors

  • Ziad T Al-Dhan Department of Medical Physics, College of Engineering, University of Nahrain.
  • Samar Y Al-Dabagh Department of Physics, College of Science for Women, University of Baghdad.
  • Thalfaa R Al-Hakeem Department of Physics, College of Science for Women, University of Baghdad.

Keywords:

Germanium, Antimony, thin films, Nd:YAG laser

Abstract

Germanium antimony (Ge:Sb) thin films have been fabricated by thermal evaporation system deposition at atmospheric pressure between (5.8x10-6 to 7.5x10-6) mbar. The (Ge:Sb) thin films then exposure to Nd:YAG laser with 1064μm wavelength at different energy densities (100,200) mj/cm2. XRD analysis show that Germanium antimony thin films are polycrystalline and the full width at half maximum (FWHM) increase as laser energy densities increases. Photocurrent and quantum efficiency of the detector increases as the laser energy densities increases.

Downloads

Published

2016-12-01

Issue

Vol. 19 No. 4 (2016): December

Section

Articles

How to Cite

[1]
“Fabrication of Laser Detectors using Ge wafer Doped with Sb”, ANJS, vol. 19, no. 4, pp. 1–7, Dec. 2016, Accessed: Apr. 24, 2024. [Online]. Available: https://anjs.edu.iq/index.php/anjs/article/view/172